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The first comprehensive text on ferroelectric memories, this book by Prof Scott of Cambridge University, author of 300 publications on ferroelectrics and the most cited papers on ferroelectric thin-film science, contains chapters on device design, processing, testing, and device physics - breakdown, leakage currents, switching mechanisms, and fatigue. State of the art device designs are illustrated among the books many figures.
More than 500 up-to-date references and 76 problems for students make it useful both as a research reference and as a text for graduate or advanced undergraduate students.