Dernière sortie
Transient Floating-Body Effects for Memory Applications in Fully-Depleted SOI MOSFETs
Memory devices based on floating-body effects (FBE) in Silicon-on-Insulator (SOI) technology are among the most promising candidates for sub-100nm and low power Dynamic Random Access Memory (DRAM). This new type of DRAMs, called Zero-Capacitor RAM (Z-RAM)
