Semi-conducing Silicides
Par :Formats :
- Nombre de pages348
- PrésentationRelié
- Poids0.59 kg
- Dimensions16,2 cm × 24,0 cm × 2,4 cm
- ISBN3-540-66111-5
- EAN9783540661115
- Date de parution25/04/2000
- Collectionmaterials science
- ÉditeurSpringer
Résumé
This book first summarizes the formation methods and properties of semiconducting silicides (Mg2Si, BaSi2, hexagonal MoSi2 and WSi2, MnSi2-x, ReSi1.75, b-FeSi2, Ru2Si3, OsSi, Os2Si3, OsSi2, Ir3Si3), discussing new prospects for silicon-based micro- and nano-electronics, optoelectronics and thermoelectrics. General material parameters, the thermodynamics and kinetics of formation, and particular semiconductor characteristics, including electronic band structure, optical and transport properties are collected and critically analyzed. The materials are shown to be effectively synthesized in thin films and bulk crystals by a variety of approaches used in modern solid-state technology.
This book first summarizes the formation methods and properties of semiconducting silicides (Mg2Si, BaSi2, hexagonal MoSi2 and WSi2, MnSi2-x, ReSi1.75, b-FeSi2, Ru2Si3, OsSi, Os2Si3, OsSi2, Ir3Si3), discussing new prospects for silicon-based micro- and nano-electronics, optoelectronics and thermoelectrics. General material parameters, the thermodynamics and kinetics of formation, and particular semiconductor characteristics, including electronic band structure, optical and transport properties are collected and critically analyzed. The materials are shown to be effectively synthesized in thin films and bulk crystals by a variety of approaches used in modern solid-state technology.
