Une pure merveille !
Un roman d'une grande beauté, drôle, fin, extrêmement lumineux sur des sujets difficiles : la perte de
l'être aimé, la dureté de la vie et la tristesse qu'on barricade parfois... Elise franco-japonaise,
orpheline de sa maman veut poser LA question à son père et elle en trouvera le courage au fil des pages,
grâce au retour de sa grand-mère du japon, de sa rencontre avec son extravagante amie Stella..
Ensemble il ne diront plus Sayonara mais Mata Ne !
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and...
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En librairie
Résumé
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.
Sommaire
Overview of Radiation Response of MOS Structures
Initial Recombination/Initial Hole Yield
Hole Transport/Short-Term Recovery
Long-Term Radiation Response
RADIATION-INDUCED OXIDE-TRAPPED CHARGE
The Interface Transition Layer
Oxide-Trapped Charge
Field Oxide Effects
Nitrided Oxides
Oxide Thickness and Scaling
RADIATION-INDUCED INTERFACE TRAPS
Radiation-Induced Interface Traps
Models and Supporting Experiments for Radiation-Induced Interface Traps