Ferroelectric Memories
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- Nombre de pages248
- PrésentationRelié
- Poids0.48 kg
- Dimensions16,1 cm × 24,1 cm × 1,4 cm
- ISBN3-540-66387-8
- EAN9783540663874
- Date de parution10/05/2000
- Collectionadvanced microelectronics
- ÉditeurSpringer
Résumé
The first comprehensive text on ferroelectric memories, this book by Prof Scott of Cambridge University, author of 300 publications on ferroelectrics and the most cited papers on ferroelectric thin-film science, contains chapters on device design, processing, testing, and device physics - breakdown, leakage currents, switching mechanisms, and fatigue. State of the art device designs are illustrated among the books many figures.
More than 500 up-to-date references and 76 problems for students make it useful both as a research reference and as a text for graduate or advanced undergraduate students.
More than 500 up-to-date references and 76 problems for students make it useful both as a research reference and as a text for graduate or advanced undergraduate students.
The first comprehensive text on ferroelectric memories, this book by Prof Scott of Cambridge University, author of 300 publications on ferroelectrics and the most cited papers on ferroelectric thin-film science, contains chapters on device design, processing, testing, and device physics - breakdown, leakage currents, switching mechanisms, and fatigue. State of the art device designs are illustrated among the books many figures.
More than 500 up-to-date references and 76 problems for students make it useful both as a research reference and as a text for graduate or advanced undergraduate students.
More than 500 up-to-date references and 76 problems for students make it useful both as a research reference and as a text for graduate or advanced undergraduate students.