Solid State Device Physics (Second Edition)
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- FormatePub
- ISBN8230316022
- EAN9798230316022
- Date de parution05/11/2024
- Protection num.pas de protection
- Infos supplémentairesepub
- ÉditeurIndependently Published
Résumé
The Physics and 6 experiments of some electronic devices are documented in this book like never before (to our knowledge). The experiments are on room temperature I-V characteristics of npn Bipolar Junction Transistor (BJT) C828 in common base and in common emitter configurations; of n-channel Junction Field Effect transistor (n-JFET) 2N5457 in common source configuration; and on Unijunction Transistors (UJT) 2N494 and 2N493.
The other 2 experiments are on design, construction and implementation of common emitter amplifier using npn BJT with voltage divider bias; and on temperature dependent I-V characteristics of an undoped bulk bar of semiconductor crystal (Ge). The book will be a great aid in teaching and learning for students majoring in physics. In this 2nd edition, more carefully obtained data are presented. Texts of device Physics have been polished for more accurate arguments in explaining the data.
Physics and experiments on I-V data of UJT are described and explained in detail using band models known from studies of nanostructure physics or microelectronics for M. S. students majoring in physics.
The other 2 experiments are on design, construction and implementation of common emitter amplifier using npn BJT with voltage divider bias; and on temperature dependent I-V characteristics of an undoped bulk bar of semiconductor crystal (Ge). The book will be a great aid in teaching and learning for students majoring in physics. In this 2nd edition, more carefully obtained data are presented. Texts of device Physics have been polished for more accurate arguments in explaining the data.
Physics and experiments on I-V data of UJT are described and explained in detail using band models known from studies of nanostructure physics or microelectronics for M. S. students majoring in physics.
The Physics and 6 experiments of some electronic devices are documented in this book like never before (to our knowledge). The experiments are on room temperature I-V characteristics of npn Bipolar Junction Transistor (BJT) C828 in common base and in common emitter configurations; of n-channel Junction Field Effect transistor (n-JFET) 2N5457 in common source configuration; and on Unijunction Transistors (UJT) 2N494 and 2N493.
The other 2 experiments are on design, construction and implementation of common emitter amplifier using npn BJT with voltage divider bias; and on temperature dependent I-V characteristics of an undoped bulk bar of semiconductor crystal (Ge). The book will be a great aid in teaching and learning for students majoring in physics. In this 2nd edition, more carefully obtained data are presented. Texts of device Physics have been polished for more accurate arguments in explaining the data.
Physics and experiments on I-V data of UJT are described and explained in detail using band models known from studies of nanostructure physics or microelectronics for M. S. students majoring in physics.
The other 2 experiments are on design, construction and implementation of common emitter amplifier using npn BJT with voltage divider bias; and on temperature dependent I-V characteristics of an undoped bulk bar of semiconductor crystal (Ge). The book will be a great aid in teaching and learning for students majoring in physics. In this 2nd edition, more carefully obtained data are presented. Texts of device Physics have been polished for more accurate arguments in explaining the data.
Physics and experiments on I-V data of UJT are described and explained in detail using band models known from studies of nanostructure physics or microelectronics for M. S. students majoring in physics.
A propos de SUJAUL CHOWDHURY
COMPUTATIONAL PHYSICS
E-book
31,49 €